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Rapid Thermal Annealing System

The Ants RTA Furnace is engineered for precise, high-speed thermal treatments of semiconductor wafers and other advanced materials. With ramp rates up to 20°C/sec and tightly controlled process environments, this system is ideal for dopant activation, silicide formation, oxidation, and thin-film crystallization. 

Unlike conventional furnaces, the RTA system uses infrared or halogen lamps for instant and uniform heating—reaching temperatures over 1000°C within seconds—while minimizing thermal diffusion. Its low thermal budget makes it the go-to solution for microelectronics research and high-speed annealing tasks in cleanroom and R&D settings. 

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Core Functions

  1. Rapid heat-up & cool-down cycles for tight thermal control 
  2. Enables dopant activation, surface modification, and thin-film treatment 
  3. Preserves structural integrity of delicate substrates 
  4. Suitable for lab-scale fabrication and prototype development 
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  1. Ultra-Fast Ramp Rates: Up to 20°C/sec for minimal dopant diffusion and sharp thermal profiles 
  2. Advanced Temperature Control: Infrared-lamp heating with PID regulation and real-time process data logging 
  3. Wide Temperature Range: From ambient to 1000°C with short dwell times 
  4. Atmosphere Flexibility: Inert, oxidizing, or reducing gases via MFC-based gas flow system 
  5. Compact Design: Space-saving footprint optimized for cleanroom integration 
  1. Semiconductor Fabrication: Dopant activation, annealing, and surface passivation 
  2. Microelectronics R&D: Crystallization of thin films and advanced materials 
  3. Optoelectronics: Silicide formation and contact annealing 
  4. Material Science: High-speed thermal treatment studies and stress relief
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