
Rapid Thermal Annealing System
The Ants RTA Furnace is engineered for precise, high-speed thermal treatments of semiconductor wafers and other advanced materials. With ramp rates up to 20°C/sec and tightly controlled process environments, this system is ideal for dopant activation, silicide formation, oxidation, and thin-film crystallization.Â
Unlike conventional furnaces, the RTA system uses infrared or halogen lamps for instant and uniform heating—reaching temperatures over 1000°C within seconds—while minimizing thermal diffusion. Its low thermal budget makes it the go-to solution for microelectronics research and high-speed annealing tasks in cleanroom and R&D settings.Â
Core Functions
- Rapid heat-up & cool-down cycles for tight thermal controlÂ
- Enables dopant activation, surface modification, and thin-film treatmentÂ
- Preserves structural integrity of delicate substratesÂ
- Suitable for lab-scale fabrication and prototype developmentÂ
Key Features
Applications
Key Features
- Ultra-Fast Ramp Rates: Up to 20°C/sec for minimal dopant diffusion and sharp thermal profilesÂ
- Advanced Temperature Control: Infrared-lamp heating with PID regulation and real-time process data loggingÂ
- Wide Temperature Range: From ambient to 1000°C with short dwell timesÂ
- Atmosphere Flexibility: Inert, oxidizing, or reducing gases via MFC-based gas flow systemÂ
- Compact Design: Space-saving footprint optimized for cleanroom integrationÂ
Applications
- Semiconductor Fabrication: Dopant activation, annealing, and surface passivationÂ
- Microelectronics R&D: Crystallization of thin films and advanced materialsÂ
- Optoelectronics: Silicide formation and contact annealingÂ
- Material Science: High-speed thermal treatment studies and stress relief